Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean

Abstract:

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As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].

Info:

Periodical:

Solid State Phenomena (Volumes 145-146)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

91-94

DOI:

10.4028/www.scientific.net/SSP.145-146.91

Citation:

N. Kurumoto et al., "Relationship between Atmospheric Humidity and Watermark Formation in IPA Dry of Si Wafer after HF Clean", Solid State Phenomena, Vols. 145-146, pp. 91-94, 2009

Online since:

January 2009

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Price:

$35.00

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