Ultra Clean Processing of Semiconductor Surfaces IX
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The contents of this publication include every conceivable issue related to contamination, cleaning and surface preparation during mainstream large-scale integrated circuit manufacture. Typically, silicon is used as the main semiconductor substrate. However, other semiconducting materials such as SiGe and SiC are currently being used in the source-sink junction areas, and materials such as Ge and III-V compounds are being considered for the transistor channel region of future-generation devices.
This special collection covers every aspect of ultra-clean technology as applied to large-scale device integration on semiconductors, including cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing. This includes studies of general topics such as particle removal using various types of mechanical treatment, drying, contamination control and contamination metrology. The FEOL and BEOL contributions cover the surface chemistry of silicon and related semiconductors such as SiGe and Ge, cleaning as related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning after chemical-mechanical-polishing (CMP).
This work will be essential reading matter for those working in the field, since the continual scaling-up and broadening of the technology requires ever new materials and approaches; each leading to new cleaning challenges and tighter specifications.