Dislocation Engineering in Multicrystalline Silicon

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Dislocations are known to be among the most deleterious performance-limiting defects in multicrystalline silicon (mc-Si) based solar cells. In this work, we propose a method to remove dislocations based on a high temperature treatment. Dislocation density reductions of >95% are achieved in commercial ribbon silicon with a double-sided silicon nitride coating via high temperature annealing under ambient conditions. The dislocation density reduction follows temperature-dependent and time-dependent models developed by Kuhlmann et al. for the annealing of dislocations in face-centered cubic metals. It is believed that higher annealing temperatures (>1170°C) allow dislocation movement unconstrained by crystallographic glide planes, leading to pairwise dislocation annihilation within minutes.

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Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

11-18

Citation:

M. I. Bertoni et al., "Dislocation Engineering in Multicrystalline Silicon", Solid State Phenomena, Vols. 156-158, pp. 11-18, 2010

Online since:

October 2009

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$38.00

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