Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies


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Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.



Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter






L.I. Murin et al., "Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies", Solid State Phenomena, Vols. 156-158, pp. 129-134, 2010

Online since:

October 2009




[1] B. Pajot, in Oxygen in Silicon, edited by F. Shimura, volume 42 of Semiconductors and Semimetals, chapter 6, Academic, NY (1994).

[2] J.W. Corbett, G.D. Watkins, R.M. Chrenko and R.S. McDonald, Phys. Rev. Vol. 121(1961), p.1015.

[3] J.W. Corbett, G.D. Watkins and R.S. McDonald: Phys. Rev. Vol. 135 (1964), p. A1381.

[4] A.K. Ramdas and M.G. Rao: Phys. Rev. Vol 142 (1966), p.451.

[5] B.G. Svensson and J.L. Lindström: Phys. Rev. B Vol. 34 (1986), p.8709.

[6] J.L. Lindström and B.G. Svensson: Mat. Res. Soc. Symp. Proc. Vol. 59 (1986), p.45.

[7] C.A. Londos, L.G. Fytros and G.J. Georgiou: Defect and Diffusion Forum Vol. 171-172 (1999), p.1.

[8] J.L. Lindström, L.I. Murin, V.P. Markevich, T. Hallberg and B.G. Svensson, Physica B Vol. 273-274 (1999), p.291.

[9] J Coutinho, R Jones, L.I. Murin, V.P. Markevich, J.L. Lindstrom, P.R. Briddon and S. Oberg, Phys. Rev. Lett. Vol. 87 (2001), 235501.

DOI: 10.1103/physrevlett.87.235501

[10] J. Hermansson, L.I. Murin., V.P. Markevich, T. Hallberg, J.L. Lindstrom, M. Kleverman, B.G. Svensson, Physica B Vol. 302-303 (2001), p.188.

DOI: 10.1016/s0921-4526(01)00426-4

[11] J.L. Lindström, L.I. Murin, T. Hallberg, V.P. Markevich, B.G. Svensson, M. Kleverman and J. Hermansson: Nuclear Inst. and Methods in Physics Research B Vol. 186 (2002), p.121.

[12] L.I. Murin, J.L. Lindström, B.G. Svensson, V.P. Markevich, A.R. Peaker and C.A. Londos: Solid State Phenomena Vol. 108-109 (2005), p.267.

DOI: 10.4028/www.scientific.net/ssp.108-109.267

[13] Y. -H. Lee, J. C. Corelli and J.W. Corbett: Phys. Lett. Vol. 60A (1977), p.2653.

[14] C.P. Ewels, R. Jones and S. Oberg: Mater. Sci. Forum. Vol. 196-201 (1995), p.1297.

[15] M. Pesola, J. von Boehm, T. Mattila and R.M. Nieminen: Phys. Rev. B Vol. 60 (1999), p.11449.

[16] Y.V. Pomozov, L.I. Khirunenko, V.I. Shakhovtsov and V.I. Yashnik: Fiz. Tekh. Poluprovodn. Vol. 24 (1990), p.993 [Sov. Phys. Semicond. Vol. 24 (1990), p.624].

[17] A.R. Bean, R.C. Newman, R.C. Smith: J. Phys. Chem. Solids Vol. 31 (1970), p.739.

[18] L. Khirunenko, V. Shakhovtsov, Y. Pomozov, and V. Yashnik, in Early Stages of Oxygen Precipitation in Silicon, edited by R. Jones (Kluwer Academic Publishers, Dordrecht, 1996), p.403.

DOI: 10.1007/978-94-009-0355-5_28

[19] N.V. Sarlis, C.A. Londos and L.G. Fytros: J. Appl. Phys. Vol. 81 (1997), p.1645.

[20] C.A. Londos, N.V. Sarlis and L.G. Fytros: J. Appl. Phys. Vol. 85 (1999), p.8074.

[21] L.J. Cheng., J.C. Corelli, J.W. Corbett and G.D. Watkins: Phys. Rev. Vol. 152 (1966), p.761.

[22] J.H. Svensson, B.G. Svensson and B. Monemar: Phys. Rev. B Vol. 38 (1988), p.4192.

[23] G. Alfieri, E.V. Monakhov, B.S. Avset and B.G. Svensson: Phys. Rev. B Vol. 68 (2003), 233202.

[24] J.W. Corbett, J.C. Bourgoin, L.J. Cheng., J.C. Corelli, E.H. Lee, P.M. Mooney and C. Weigel, in Radiat. Effects in Semic., edited by N.B. Urli and J.W. Corbett (Institute of Phys., Conf. Ser. N31, 1976), p.1.

[25] Y.H. Lee and J.W. Corbett, Phys. Rev. B Vol. 13 (1976), p.2653.

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