Anomalous Out-Diffusion Profiles of Nitrogen in Silicon

Abstract:

Article Preview

Out-diffusion nitrogen profiles measured by SIMS after annealing at 850 and 800oC, have a peculiar minimum at a depth of about 5 m. The profiles are well reproduced by simulations assuming that there is a considerable fraction of nitrogen stored in substitutional clusters VN4. Upon annealing, these clusters lose nitrogen and convert into a stable high-temperature form VN1. This reaction involves a preliminary attachment of a fast-diffusing interstitial trimer, N3. Accordingly, the conversion occurs only in the bulk but not at the surface (due to out-diffusion loss of N3), and the substitutional component decreases from the surface towards the bulk. By fitting the profiles, the two basic parameters of the N2/N1 transport are deduced: P = D1K1/2 (a combination of the monomeric diffusivity D1 and the dissociation constant of dimers, K), and the dissociation time of dimers. With these data, D1(T) and K(T) are specified.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

149-154

DOI:

10.4028/www.scientific.net/SSP.156-158.149

Citation:

V. V. Voronkov et al., "Anomalous Out-Diffusion Profiles of Nitrogen in Silicon", Solid State Phenomena, Vols. 156-158, pp. 149-154, 2010

Online since:

October 2009

Keywords:

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.