The measurements of stress induced dichroism on oxygen absorption band near 1107 cm-1 in Si1-xGex compounds and subsequent kinetics of the dichroism recovery upon isothermal annealing have been carried out. It has been found that the magnitude of introduced by uniaxial stress dichroism decreases with increasing Ge content. Two components in the dichroism annealing kinetics have been found. On the basis of studying absorption spectra of samples under investigations it was assumed that two components in relaxation correspond to the diffusion of oxygen being in a different nearest environment: the one component corresponds to oxygen surrounded by silicon atoms and the second one to the oxygen the neighbour of which is Ge atom. Diffusivity for each of the components has been determined. It has been shown that the diffusivity of oxygen that is in both of these configurations decreases with increasing Ge content.