Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects
In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals. The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing the crystal quality. Numerical experiments are conducted to illustrate the model predictions.
M. Kittler and H. Richter
F. Loix et al., "Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects", Solid State Phenomena, Vols. 156-158, pp. 205-210, 2010