Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects

Abstract:

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In this paper a numerical model is investigated to predict and optimize the quality of Czochralski-grown silicon single crystals. The different mechanisms governing the formation, transport, recombination, nucleation and growth of point- and micro-defects in the crystal are put together with a view to getting a reliable picture of the entire set of physical effects governing the crystal quality. Numerical experiments are conducted to illustrate the model predictions.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

205-210

DOI:

10.4028/www.scientific.net/SSP.156-158.205

Citation:

F. Loix et al., "Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects", Solid State Phenomena, Vols. 156-158, pp. 205-210, 2010

Online since:

October 2009

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Price:

$35.00

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