Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

Abstract:

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The results of experimental investigations of the dislocation-related DLTS-peaks originated from the dislocation networks (DN) are presented. Samples with DNs were produced by direct bonding of p-type silicon wafers and no enhancement of oxygen concentration was detected near the DN plane. Origins of the DLTS peaks were proposed and a correlation with the dislocation-related photoluminescence data was established based on known dislocation structure of the samples. Two types of shallow DLTS peaks exhibited Pool-Frenkel effect, which could be linked to the dislocation deformation potential. One of the shallow DLTS peaks was related to straight parts of screw dislocations and another - to the intersections of the dislocations.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

283-288

DOI:

10.4028/www.scientific.net/SSP.156-158.283

Citation:

M. Trushin et al., "Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers", Solid State Phenomena, Vols. 156-158, pp. 283-288, 2010

Online since:

October 2009

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Price:

$35.00

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