Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals

Abstract:

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The IR absorption spectra and kinetics of the oxygen solid solution decay were studied in the Si1¡xGex crystals (0 · x · 0:055) plastically deformed at 680±C up to the 2{5% residual strain. It is found that the defects of non-dislocation nature, the dislocation trails, are formed during the plastic deformation of all studied SiGe crystals. The ¯ne structure of the IR absorption spectra around the 1000 cm¡1 wave number is found to be nearly identical in the pure Si (no Ge) samples and Si1¡xGex crystals with x · 0:02. At higher x the ¯ne structure was not detected due to the alloy-related broadening. In all studied crystals, the decay of the supersaturated oxygen solid solution at 650±C is determined by oxygen agglomeration at the dislocation trails as shown by the comparison with the samples annealed at 1150±C.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

295-298

DOI:

10.4028/www.scientific.net/SSP.156-158.295

Citation:

N. Yarykin and N. V. Abrosimov, "Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals", Solid State Phenomena, Vols. 156-158, pp. 295-298, 2010

Online since:

October 2009

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$35.00

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