Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene

Abstract:

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Irradiation with high energy (500 keV) C+ ions at fluences from 11013 to 11014 cm-2 was used to introduce controlled amounts of defects in single layers of graphene deposited on a SiO2(100 nm)/n+Si substrate. Scanning Capacitance Spectroscopy (SCS) was used as non-destructive characterization technique to probe the effect of irradiation on the electrical properties of graphene. In particular, a comparative study between the local capacitance of pristine graphene and irradiated graphene is presented, showing that lateral variations in irradiated graphene are distinctly higher. The local quantum capacitance per unit area C’q of graphene was extracted from raw data. While a narrow distribution of C’q values was obtained in pristine graphene, two distinct distributions were obtained in irradiated monolayers, associated to locally damaged and not damaged regions, respectively.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

305-311

DOI:

10.4028/www.scientific.net/SSP.156-158.305

Citation:

S. Sonde et al., "Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene", Solid State Phenomena, Vols. 156-158, pp. 305-311, 2010

Online since:

October 2009

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Price:

$35.00

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