Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes
The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.
M. Kittler and H. Richter
J. Eriksson et al., "Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes", Solid State Phenomena, Vols. 156-158, pp. 331-336, 2010