Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes

Abstract:

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The electrical current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/3C-SiC Schottky diodes were studied as a function of contact area. The results were correlated to defects in the 3C-SiC, which were studied and quantified by conductive atomic force microscopy (C-AFM). A method based on C-AFM was introduced that enables current-voltage characterization of diodes of contact radius down to 5 µm, which consequently allows the extraction of diode parameters for Schottky diodes of very small contact area.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

331-336

DOI:

10.4028/www.scientific.net/SSP.156-158.331

Citation:

J. Eriksson et al., "Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes", Solid State Phenomena, Vols. 156-158, pp. 331-336, 2010

Online since:

October 2009

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Price:

$35.00

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