Paper Title:
Suppression of Pores Formation on a Surface of p-Si by Laser Radiation
  Abstract

The influence of strongly absorbing N¬2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope, atomic force microscope and photoluminescence. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were not observed. At the same time, pores formation on the non-irradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV and intensity of photoluminescence increases with current density. Suppression of the pores formation by the laser radiation is explained with inversion of Si type conductivity from p-type to n-type. This fact is explained by Thermogradient effect – generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of n-Si layer on p-Si substrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.

  Info
Periodical
Solid State Phenomena (Volumes 156-158)
Edited by
M. Kittler and H. Richter
Pages
337-341
DOI
10.4028/www.scientific.net/SSP.156-158.337
Citation
A. Medvid, P. Onufrijevs, L. Fedorenko, N. Yusupov , E. Dauksta, "Suppression of Pores Formation on a Surface of p-Si by Laser Radiation", Solid State Phenomena, Vols. 156-158, pp. 337-341, 2010
Online since
October 2009
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich
Abstract:In this work we have studied the in-depth distribution of copper deposited on the surface of the hydrogen pre-implanted Cz Si wafers...
161
Authors: Takeshi Ohshima, Tomoya Honda, Shinobu Onoda, Takahiro Makino, Moriyoshi Haruyama, Tomihiro Kamiya, Takahiro Satoh, Yasuto Hijikata, Wataru Kada, Osamu Hanaizumi, Alexander Lohrmann, James R. Klein, Brett C. Johnson, Jeffrey C. McCallum, Stefania Castelletto, Brant C. Gibson, Hannes Kraus, Vladimir Dyakonov, G.V. Astakhov
3.3: Band Structure, Charge Transport, Point Defects
Abstract:Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton...
233
Authors: Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Jaweb Ben Messaoud, Tian Lin Wang, Hervé Peyre, Thierry Chassagne, Marcin Zielinski, Sandrine Juillaguet
3.4: Optical and other Caracterisation
Abstract:Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and...
275