Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi


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Defects distribution in 6H-SiC implanted with Bi ions was investigated with the local cathodoluminescence. There are two typical areas with radiation defects found in implanted samples. Implanted layer was about 27 micrometers depth. Far-action area with radiation defects was observed for the first time. Thickness of this area varies from few tens up to hundreds micrometers. This effect depended on concentration of defects i.e. irradiation fluence. Radiation defects at this area disappeared after annealing the sample if fluence is not to high.



Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter






D.B. Shustov et al., "Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi", Solid State Phenomena, Vols. 156-158, pp. 401-405, 2010

Online since:

October 2009




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