Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers

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Silicon and germanium films epitaxially grown on metal oxide buffer layers on Si(111) substrates are characterized by different X-ray techniques, transmission electron microscopy and Raman spectroscopy. Pr2O3 and Y2O3 or a combination of both is used as buffer material. X-ray pole figure measurements and grazing incident X-ray diffraction prove that epi-semiconductor layers can be grown single crystalline with exactly the same in-plane orientation as the Si(111) substrate. Epi-Ge layers show a small fraction (less than 0.5 vol. %) of so-called type B rotation twin regions located near the oxide-Ge interface. The main structural defects for both epi materials are micro twin lamellas lying in {111} planes 70° inclined to the wafer surface that may reach through the whole layer from the oxide interface to the surface. Furthermore, TEM confirms the existence of stacking faults and threading dislocations. X-ray grazing incident diffraction and Raman measurements show that epi-Ge layers on Pr2O3 buffer are nearly fully relaxed, while epi-Si layers on Y2O3/Pr2O3 double buffer are compressive strained depending on their own thickness and the thickness of the underlying Y2O3 layer. It is demonstrated that the epi-layer quality can be improved by post-deposition annealing procedures.

Info:

Periodical:

Solid State Phenomena (Volumes 156-158)

Edited by:

M. Kittler and H. Richter

Pages:

467-472

DOI:

10.4028/www.scientific.net/SSP.156-158.467

Citation:

P. Zaumseil et al., "Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers", Solid State Phenomena, Vols. 156-158, pp. 467-472, 2010

Online since:

October 2009

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Price:

$35.00

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