Nanosized Silicon Carbide Obtained from Rice Husks


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Two ways to obtain nanosized silicon carbide (SiC) powders from the products of thermal decomposition of rice hulls and posterior thermal and chemical treatment of SiO2-C precursors are shown in the present paper. The reagents and products were analyzed using BET, DTA, IR, XRD and SEM/TEM. Precursors obtained from rice husks containing pure SiO2 and a controlled SiO2-C ratio were used for the synthesis of SiC. The synthesis of SiC proceeded for 30-45 min in a graphite heater furnace under protective Ar atmosphere at relatively low temperatures (1450oC-1550oC). Nanosized dimensions of reagents obtained from rice husks and their high activity allow obtaining SiC in relatively milder thermal regimes. TEM and XRD analysis revealed synthesis of nanostructured mainly β-SiC with a mean crystallite size of 40-100 nm. Due to their purity and nano-scale properties, the products obtained are appropriate for production of bulk SiC or design of SiC–based ultra high-temperature materials using the methods of powder metallurgy.



Solid State Phenomena (Volume 159)

Edited by:

Lilyana Kolakieva and Roumen Kakanakov




D. D. Radev and I. Uzunov, "Nanosized Silicon Carbide Obtained from Rice Husks", Solid State Phenomena, Vol. 159, pp. 153-156, 2010

Online since:

January 2010




[1] S. Iijima: Nature Vol. 354 (1991), p.56.

[2] C.M. Lieber: Solid State Commun. Vol. 107 (1998), p.607.

[3] S. Madapura, A.J. Steckl, M. Loboda: J. of the Electrochem. Soc. Vol. 146 (3) (1999), p.1197.

[4] N.E. Korsunka, I. Tarasov, V. Kushnirenko, S. Ostapenko: Semicon. Sci. Tecnol. Vol. 19 (2004), p.833.

[5] W. Shi, Y. Zheng, H. Peng, N. Wang, C.S. Lee and T. Lee: J. Am. Chem. Soc. Vol. 83 (2000), p.3228.

[6] Z.S. Wu, S.Z. Deng , J. Chen, J. Zhou: Appl. Phys. Lett. Vol. 80 (2002), p.3829.

[7] H.F. Zhang, C.M. Wang, S.L. Wang: Nano Lett. Vol. 2 (2002), p.941.

[8] J. Narayan, R. Raghunathan, R. Chowdhury, K. Jagannadham: J. Appl. Phys. Vol. 75 (1994), p.7252.

[9] K. Nagarajan, S. Kumar Raman: Bulg. J. Phys. Vol. 35 (2008), p.53.

[10] V. Vikulin, I. Shkarupa, T. Gurina, M. S. Paizulahanov, Sh. Faiziev, G. Adilov: Patent RU 2299177 (2007).

[11] E.H.P. Wecht in: Applied Mineralogy, Springer, Vienna, (1977) p.21.

[12] K. Winnacker, L. Koehler in: Chemische Technologie, 4-th ed., volume 2, Hanser, Munich, (1982) pp.627-1500 SiC SiC intensity, cps 2 theta, deg.

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