Calculation Methods to Determine Crystallographic Elements: Interface Plane, Surfaces Plane and Twinning Elements, Based on Electron Diffraction Orientation Measurements by SEM and TEM
In the present work, we summarize three calculation methods to determine some specific crystallographic elements based on electron diffraction orientation measurements by SEM and TEM. The first one is to determine the plane indices of the faceted interfaces where the orientation relation¬ships (ORs) between the adjacent crystals are reproducible. To acquire the orientation data, we need to prepare only one sample surface but not two perpendicular sample surfaces as usually required in the standard double trace method. The second is to characterize the surface crystalline planes and directions of a faceted nano-particle under TEM imaging and diffraction mode. With the determination of the edge trace vectors and then the plane normal vectors in the screen coordinate system of TEM, their Miller indices in the crystal coordinate system can be calculated through coordinate trans¬formation. The third method is to determine the twin type and the twinning elements based on the orientation information acquired by SEM EBSD measurements from the two twinned crystals through misorientation calculations. These methods will facilitate related studies.
H. Klein and R.A. Schwarzer
C. Esling et al., "Calculation Methods to Determine Crystallographic Elements: Interface Plane, Surfaces Plane and Twinning Elements, Based on Electron Diffraction Orientation Measurements by SEM and TEM", Solid State Phenomena, Vol. 160, pp. 11-16, 2010