Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition

Abstract:

Article Preview

Laser deposition method was used for growing ferromagnetic semiconductor and half-metal compound layers. GaMnAs and InMnAs layers were grown by alternating laser ablation of solid targets (semiconductor and Mn) in hydrogen and arsine flow. The layers exhibited ferromagnetic properties (detected by Hall effect measurements) from 10 K to room temperature (for InMnAs). Half-metal compound layers were deposited by the techniques of reactive laser deposition (MnAs, MnP) and alternating laser deposition (MnSb). The half-metal layers exhibit ferromagnetism at temperatures up to 300 K.

Info:

Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

245-248

DOI:

10.4028/www.scientific.net/SSP.168-169.245

Citation:

Y.A. Danilov et al., "Ferromagnetic Semiconductors and Half-Metal Compounds Obtained by Laser Deposition", Solid State Phenomena, Vols. 168-169, pp. 245-248, 2011

Online since:

December 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.