Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2

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The heterostructure ferromagnetic/semiconductor ZnSiAs2/Si was obtained by using the Si-ZnAs2 phase diagram. The magnetic properties of Zn1-XMnXSiAs2 bulk crystals and ferromagnetic layered heterostructures were similar. The same method was used for preparing a ferromagnetic layer ZnGeAs2 on a germanium substrate.

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Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

313-316

DOI:

10.4028/www.scientific.net/SSP.168-169.313

Citation:

I.V. Fedorchenko et al., "Making Ferromagnetic Heterostructures Si/Zn(1-X)MnXSiAs2 and Ge/Zn(1-X)MnXGeAs2", Solid State Phenomena, Vols. 168-169, pp. 313-316, 2011

Online since:

December 2010

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$38.00

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