On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers

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Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host.

Info:

Periodical:

Solid State Phenomena (Volumes 168-169)

Main Theme:

Edited by:

V. Ustinov

Pages:

35-38

DOI:

10.4028/www.scientific.net/SSP.168-169.35

Citation:

E.A. Gan'shina et al., "On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers", Solid State Phenomena, Vols. 168-169, pp. 35-38, 2011

Online since:

December 2010

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$35.00

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