Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties

Abstract:

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The results of the investigation of stresses relaxation by strain by means of EPR spectra, IR absorption spectra, SEM and samples deflection are presented. It has been shown that stresses relaxation mechanism depended on the oxidation conditions: temperature, cooling rate, oxide thickness. In the Si-SiO2-Si3N4 system the stresses relaxation by the strain occur due to the opposite sign of the thermal expansion coefficient of Si-SiO2 and Si3N4 on Si. Laser irradiation allows to modify the system stresses.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

259-262

DOI:

10.4028/www.scientific.net/SSP.178-179.259

Citation:

D. Kropman et al., "Stress Relaxation Mechanism by Strain in the Si-SiO2 System and its Influence on the Interface Properties", Solid State Phenomena, Vols. 178-179, pp. 259-262, 2011

Online since:

August 2011

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Price:

$35.00

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