Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals

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The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons have been investigated in the course of isochronal annealing. Thermally stable point radiation defects which begin to anneal at ~ 300 C° – 340 C° have been revealed; they manifest themselves as deep donors. It is argued that these defects involve, at least, more than one vacancy and the impurity atom (s) of phosphorus.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

313-318

Citation:

N. Y. Arutyunov et al., "Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 313-318, 2011

Online since:

August 2011

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$41.00

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