Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals


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The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons have been investigated in the course of isochronal annealing. Thermally stable point radiation defects which begin to anneal at ~ 300 C° – 340 C° have been revealed; they manifest themselves as deep donors. It is argued that these defects involve, at least, more than one vacancy and the impurity atom (s) of phosphorus.



Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler




N. Y. Arutyunov et al., "Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 313-318, 2011

Online since:

August 2011




[1] V.V. Kozlovski, V.V. Emtsev, A.M. Ivanov, A.A. Lebedev, G.A. Oganesyan, D.S. Poloskin, N.B. Strokan, Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation, Physica B 404 (2009) 4752-4754.

DOI: https://doi.org/10.1016/j.physb.2009.08.191

[2] V. Kozlovski, V. Abrosimova, Radiation Defect Engineering, first ed., World Scientific, Singapore, (2005).

[3] V.V. Emtsev, T.V. Mashovets, Impurities and Point Defects in Semiconductors, first ed., Radio i Svyaz', Moscow, 1981. [in Russian].

[4] J. Makinen, P. Hautojarvi, C. Corbel, Positron annihilation and the charge states of the phosphorus-vacancy pair in silicon, J. Phys. Condens. Matter 4 (1992)5137-5154.

DOI: https://doi.org/10.1088/0953-8984/4/22/012

[5] Mäkinen, Positron mobility and trapping in semiconductors, Mat. Sci. Forum 105-110 (1992) 369-376.

DOI: https://doi.org/10.4028/www.scientific.net/msf.105-110.369

[6] R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors, first ed., Springer-Verlag, Berlin, (1999).

DOI: https://doi.org/10.1007/978-3-662-03893-2_3

[7] N. Yu. Arutyunov, V. Yu. Trashchakov, 1D-ACAR studies of as-grown impurity centers in silicon, Solid State Phenom. 82 – 84 (2002) 795-800.

DOI: https://doi.org/10.4028/www.scientific.net/ssp.82-84.795

[8] N. Yu. Arutyunov , V.V. Emtsev, Atomic environment of positrons annihilating in HT Cz-Si crystal, Solid State Phenom. 108-109 (2005) 615-620.

DOI: https://doi.org/10.4028/www.scientific.net/ssp.108-109.615

[9] W. Brandt, Positron dynamics in solids, Appl. Phys. 5 (1974) 1-23.

[10] M.J. Puska, R.M. Nieminen, Theory of positrons in solids and on solid surfaces, Rev. Mod. Phys. 66 (1994) 841-897.

DOI: https://doi.org/10.1103/revmodphys.66.841

[11] A.C. Damask, G.J. Dienes, Point Defects in Metals, first ed., Gordon&Breach Sci. Publishers, New York-London, (1963).

[12] M. Hakala, M.J. Puska, R.M. Nieminen, Momentum distributions of electron-positron pairs annihilating at vacancy clusters in Si, Phys. Rev. B 57 (1998) 7621-7627.

DOI: https://doi.org/10.1103/physrevb.57.7621

[13] V.N. Abakumov, V. Perel, I.N. Yassievitch, Capture of carriers by attractive centers in semiconductors (review), Sov. Phys. Semicond. 12 (1978)1 - 28.