Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals
The changes of the positron lifetime and loss/recovery of shallow donor states in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons have been investigated in the course of isochronal annealing. Thermally stable point radiation defects which begin to anneal at ~ 300 C° – 340 C° have been revealed; they manifest themselves as deep donors. It is argued that these defects involve, at least, more than one vacancy and the impurity atom (s) of phosphorus.
W. Jantsch and F. Schäffler
N. Y. Arutyunov et al., "Positron Probing of Point Radiation Defects in Proton - Irradiated FZ-Silicon Single Crystals", Solid State Phenomena, Vols. 178-179, pp. 313-318, 2011