Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.
W. Jantsch and F. Schäffler
A. Uleckas et al., "Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping", Solid State Phenomena, Vols. 178-179, pp. 347-352, 2011