Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Abstract:

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Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 1019 cm-3 and 1020 cm-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 1014 and 1017 e/cm2 to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

347-352

DOI:

10.4028/www.scientific.net/SSP.178-179.347

Citation:

A. Uleckas et al., "Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping", Solid State Phenomena, Vols. 178-179, pp. 347-352, 2011

Online since:

August 2011

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Price:

$35.00

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