In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction

Abstract:

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The measurement of Pendellösungs oscillations was used to observe the time dependent nucleation of oxygen in a Czochralski grown single crystal at 750°C. It is shown, that the theoretical approach of the statistical dynamical theory describes the data well. Within the framework of this theory it is possible to determine the static Debye-Waller-factor as a function of the annealing time by evaluating the mean value of the Bragg intensity and the period length. The temperature influence on the Pendellösungs distance was corrected for by measurement of a Float-zone sample at the same temperature.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

353-359

DOI:

10.4028/www.scientific.net/SSP.178-179.353

Citation:

J. Will et al., "In Situ Observation of the Oxygen Nucleation in Silicon with X-Ray Single Crystal Diffraction", Solid State Phenomena, Vols. 178-179, pp. 353-359, 2011

Online since:

August 2011

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Price:

$35.00

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