Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix


Article Preview

We have presented a technique, based on magnetron sputtering of silicon target in the mixture of argon, silane, and oxygen. Addition of oxygen gas was shown to cause formation of silicon suboxide layers with amorphous silicon nanoclusters without subsequent annealing. The layers exhibit significant photoluminescence at room temperature. Their photoluminescence spectra reveal special features predicted in the preceding well-known theoretical works. Heterostructures, fabricated with such layers, show high photocurrent efficiency in short-wavelength spectral region. Our results demonstrate that the investigated structures are promising for photoelectric and photovoltaic applications.



Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler






O. M. Sreseli et al., "Photocurrent and Photoluminescence of Amorphous Silicon Nanoclusters Embedded in Silicon Suboxide Matrix", Solid State Phenomena, Vols. 178-179, pp. 465-470, 2011

Online since:

August 2011




[1] Next Generation Photovoltaics, A. Martí, and A. Luque (Eds), Series in Optics and Optoelectronics, p.332. IOP Publishing Ltd, (2004).

[2] Yu.K. Undalov, E.I. Terukov, O.B. Gusev, V.M. Lebedev, I.N. Trapeznikova, Effect of electric field in the course of obtaining a-SiOx: H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions, Semiconductors, 42 (2008).

DOI: 10.1134/s106378260811016x

[3] M.N. Brodsky, M. Cardona, J.J. Cuomo, Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering, Phys. Rev. B, 16 (1977) 3556-3571.

DOI: 10.1103/physrevb.16.3556

[4] V.N. Seminogov, V.I. Sokolov, V.N. Glebov, et al., Investigation of structural-phase transformations and optical properties of composites on the basis of silicon nanoclusters embedded in silicon oxide matrix, Dinamika slozhnyh system (Russian) 3 (2009).

[5] ASTM F 1188-93a, p.438, (Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption).

[6] Properties of Porous Silicon. L. Canham (Ed). INSPEC, The Institution of Electrical Engineers, London, United Kingdom. (1997).

[7] G. Allan, C. Delerue, and M. Lannoo, Electronic structure of amorphous silicon nanoclusters, Phys. Rev. Lett. 78 (1997) 3161-3164.

DOI: 10.1103/physrevlett.78.3161

[8] Eun-Chel Cho, Sangwook Park, Xiaojing Hao, et al., Silicon quantum dot/crystalline silicon solar cells, Nanotechnology, 19 (2008) 245201-245206.

DOI: 10.1088/0957-4484/19/24/245201

[9] Properties of Amorphous Silicon, 2nd ed. Institute of Electrical Engineers, London, (1989).

In order to see related information, you need to Login.