The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process

Abstract:

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The behavior of the oxygen-containing precipitate in silicon wafer on different stages of the getter formation process is considered from the mechanical point of view. The precipitate is modeled as a spheroidal inclusion undergoing inelastic eigenstrains in an anisotropic silicon matrix. The stress-strain state in the precipitate and matrix is calculated within the framework of the model. An energetic criterion of breaking the spherical shape by the coherent precipitates is obtained and analyzed. Criteria of the formation and onset of motion of the dislocation loops in the vicinity of the precipitate are also proposed. The obtained results are compared with the available experimental data.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

483-488

DOI:

10.4028/www.scientific.net/SSP.178-179.483

Citation:

P. S. Shushpannikov et al., "The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process", Solid State Phenomena, Vols. 178-179, pp. 483-488, 2011

Online since:

August 2011

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$35.00

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