Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

Abstract:

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High angle close to 90° tilt Si boundary created by direct wafer bonding (DWB) using SmartCut® technology is studied in this work. Experimental identification of defects and morphologies at the interface is realized using conventional transmission electron microscopy (TEM) and geometric phase analysis (GPA) of high-resolution TEM images. Atom reconstruction of the interface along the direction is carried out within the frame of the O-lattice theory. We demonstrate that to preserve covalent bonding across the interface it should consist of facets intersected by a maximum of six planes with three 90° Shockley dislocations per facet. For a long enough interface the formation of Frank dislocations is predicted with a period equal 6 times that of Shockley dislocations. Long range undulations of the interface are shown to be related directly to a deviation from exact 90° tilt of the layer with respect to the substrate.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

489-494

DOI:

10.4028/www.scientific.net/SSP.178-179.489

Citation:

N. Cherkashin et al., "Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory", Solid State Phenomena, Vols. 178-179, pp. 489-494, 2011

Online since:

August 2011

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Price:

$35.00

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