Application of Double Crucible in Cz Si Crystal Growth

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The numerical modeling of melt flow, heat transfer and impurity (phosphorus) diffusion in the double crucible of "Redmet-90M" Cz puller was carried out in an application to a 200 mm diameter Si single crystal growth. The double crucible consists of two coaxial crucibles having different sizes: 490 mm (external) and 300 mm (internal) inner diameters. The bottom of internal crucible has a central hole of Do = 6 and 12 mm diameter for melt inflow from the external crucible. During crystal pulling the granulated Si was added in the external crucible and a melt of the internal crucible was doped by phosphorus. Three-dimensional features of a rotating melt flow affecting on heat transfer and impurity diffusion in the internal crucible were analyzed. In particular, the melt precession and thermal asymmetry near the liquid-solid interface (LSI) in the internal crucible are discussed. It is shown that a significant phosphorus losses caused by its evaporation from a melt surface may be compensated by additional phosphorus doping in the internal crucible.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

501-506

DOI:

10.4028/www.scientific.net/SSP.178-179.501

Citation:

A.I. Prostomolotov and N.A. Verezub, "Application of Double Crucible in Cz Si Crystal Growth", Solid State Phenomena, Vols. 178-179, pp. 501-506, 2011

Online since:

August 2011

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$38.00

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