Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering

Abstract:

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In this work we report the results of the synthesis, structural and optical characterization of SiO2/Ge/SiO2 heterostructures by reactive RF sputtering. The SiO2 films were grown by reactive sputtering employing a plasma mixture of oxygen and argon. The Ge layer was grown employing an Ar atmosphere. The samples were prepared on p-type Si (1 1 1) substrates by reactive sputtering. The effect of the partial pressure of oxygen on the electronic properties of the heterostructure is reported[1]. Structural characterization was carried out by grazing angle X-ray difraction. Surface roughness was quantified by atomic force microscopy. The presence of Ge nanocrystals (Ge-NCs) was evidenced by X-ray diffraction. The vibrational properties were studied by Raman spectroscopy. The Raman spectra showed modes associated to germanium indicating the formation of low dimensionality germanium particles embedded within a SiO2 matrix. Photoluminescence emission is observed around ~1.7 eV and it is associated to the quantum confinement of carriers in Ge-NCs. Ohmic contacts were deposited using a van der Pauw geometry employing an a AuSb alloy for the contacts. Temperature dependent Hall (T-Hall) measurements were done between 35 K and 150 K, using the van der Pauw method. The results indicated low resistivity values that could be explained due to some variable range hopping conduction mechanism.

Info:

Periodical:

Solid State Phenomena (Volumes 178-179)

Edited by:

W. Jantsch and F. Schäffler

Pages:

61-66

DOI:

10.4028/www.scientific.net/SSP.178-179.61

Citation:

A. Hernandez-Hernandez et al., "Synthesis of Light Emitting Ge Nanocrystals by Reactive RF Sputtering", Solid State Phenomena, Vols. 178-179, pp. 61-66, 2011

Online since:

August 2011

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Price:

$35.00

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