Defect Feature Acquisition of LED Wafer Using Region Growing Segmentation with Clustering Strategy

Abstract:

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The defects of LED wafer may be caused from the manufacturing environments such as contamination. The appearance of the defects can results in functional faults of LED wafer. Therefore, it is very necessary to detect the defects in LED wafer. In this paper, a new method is presented for the defect feature acquisition of LED wafer, the method uses region growing to segment the LED wafer image in order to acquire the defect features. The clustering strategy is added to the region growing for enhancing the acquisition precision of defect features. The defect features that have been obtained can be used to detect these defects of LED wafer. The method consists of following two steps. First of all, the original image of LED wafer is partitioned into several sub-blocks that are not overlapped, and then these sub-blocks are segmented by clustering strategy. Secondly, the whole wafer image is segmented by using region growing algorithm.

Info:

Periodical:

Solid State Phenomena (Volumes 181-182)

Edited by:

Yuan Ming Huang

Pages:

251-254

DOI:

10.4028/www.scientific.net/SSP.181-182.251

Citation:

Z. L. Pan et al., "Defect Feature Acquisition of LED Wafer Using Region Growing Segmentation with Clustering Strategy", Solid State Phenomena, Vols. 181-182, pp. 251-254, 2012

Online since:

November 2011

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Price:

$35.00

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