Anisotropic Hole Mobility in Strained Si1-xGex/(001)Si

Abstract:

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Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.

Info:

Periodical:

Solid State Phenomena (Volumes 181-182)

Edited by:

Yuan Ming Huang

Pages:

388-392

DOI:

10.4028/www.scientific.net/SSP.181-182.388

Citation:

J. J. Song et al., "Anisotropic Hole Mobility in Strained Si1-xGex/(001)Si", Solid State Phenomena, Vols. 181-182, pp. 388-392, 2012

Online since:

November 2011

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Price:

$35.00

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