Electrodeposition of Polyhedral Copper Crystals on Porous Silicon

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Electrochemical deposition of copper from copper chloride aqueous electrolyte on porous silicon (PS) substrate was investigated in the current density range of 5 mA/cm2 to 35 mA/cm2. Scanning electron microscopy (SEM) was utilized to characterize the surface morphology of as-electrodeposited PS. SEM images illustrate that the applied current density has a profound influence on the shape of copper crystal electrodeposited on the top surface of PS films. When the applied current density was fixed at 5mA/cm2, most of the copper crystals are in the shape of cube along with a small number of cuboid-shape. With the increasing current density, cuboid-shaped copper crystals gradually vanished. When the current density is up to the 35mA/cm2, we surprisingly observe that the cube shape predominates simultaneously with the emergence of truncated tetrahedron. A tentative explanation for the growth mechanism of copper crystal having various shapes is explored.

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Periodical:

Solid State Phenomena (Volumes 181-182)

Edited by:

Yuan Ming Huang

Pages:

434-438

DOI:

10.4028/www.scientific.net/SSP.181-182.434

Citation:

M. Meng and Y. M. Huang, "Electrodeposition of Polyhedral Copper Crystals on Porous Silicon", Solid State Phenomena, Vols. 181-182, pp. 434-438, 2012

Online since:

November 2011

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$35.00

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