Bulk Synthesis and Structural Determination of High Mobility Multication Transparent Conducting Oxides
This work reports the synthesis of novel quaternary transparent conducting oxide Cd(1-x)Sn(1-x)InxGaxO3( x=0.1, 0.2, 0.3) at 1225°C via solid state reaction route. The investigations on structural, optical and electrical properties have been carried out. Powder X-ray diffraction revealed the phase purity and distorted orthorhombic structure of the species synthesized. Distortion of the structure is due to the substitution of In3+ and Ga3+ in CdSnO3 (JCPDS card no.340885) matrix. The optical transmittance approximated by the reflectance shows considerable increase in the transmittance of visible light along with the increase of substitution. Typical Burstein-Moss effect is observed with the increase in x value as a variation in optical bandgap from 2.7 to 2.9eV. Four point Hall measurements by Van der-Pauw method exhibit superior properties in charge carrier concentration and mobility. Maximum bulk charge concentration of 4.78x1017 cm-3 is obtained for x=0.3. Hall mobility depends on carrier concentration and steeply increases with the carrier concentration. Considerable drop in the resistivity of the material along with higher transmittance is a critical finding in the experiment.
Yuriy Verbovytskyy and António Pereira Gonçalves
P. Jayaram et al., "Bulk Synthesis and Structural Determination of High Mobility Multication Transparent Conducting Oxides", Solid State Phenomena, Vol. 194, pp. 124-128, 2013