Thermoelectric Properties of Pb1-xCdxSe Crystals Grown by Vertical Bridgman Method
Single crystals of Pb1-xCdxSe compounds with x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, SEM and electron-probe microanalysis (EPMA). The thermoelectric behaviors for the Pb1-xCdxSe crystals were studied by means of thermal and carrier transport measurements in the temperature range between 50K and 400K. X-ray diffraction and SEM analysis confirmed that as-grown Pb1-xCdxSe crystals are simgle phase. The experimental results showed that the PbTe sample is p-type semiconductor but Pb1-xCdxSe samples with x = 0.01, 0.03, 0.05, 0.07 and 0.1 are n-type semiconductors. Temperature dependences of resistivity, Seebeck coefficient, and thermal conductivity for the various compositions of Pb1-xCdxSe were analyzed. The dimensionless thermoelectric figure of merit ZT for these compounds was evaluated and discussed. It was found that Pb0.95Cd0.05Se exhibits the best thermoelectric performance. The maximum figure of merit (ZT) of Pb0.95Cd0.05Se is about 0.47 at 290 K.
Yuriy Verbovytskyy and António Pereira Gonçalves
H. J. Gau et al., "Thermoelectric Properties of Pb1-xCdxSe Crystals Grown by Vertical Bridgman Method", Solid State Phenomena, Vol. 194, pp. 148-152, 2013