The Risk of Pattern Collapse for Structures in Future Logic Devices


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Pattern collapse has long been known in photoresist patterning where the resist patterns merge or collapse during rinsing and drying steps [. The forces responsible for this collapse were identified as capillary forces during the drying process. Structures such as titanium nitride DRAM cylinders [ and silicon Flash shallow trench isolation (STI) lines have also been observed to be pattern collapse sensitive due to increase in aspect ratio of the features. Micro-electromechanical systems (MEMS) devices also show a similar phenomenon, but on a larger length scale, and is referred to as stiction [. For the technology nodes <14 nm, back-end-of-line (BEOL) low-k structures are also on the verge to show pattern collapse behavior. Whether a structure is sensitive to pattern collapse or not depends on several parameters, which will be analyzed in this paper.



Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




M. Sankarapandian et al., "The Risk of Pattern Collapse for Structures in Future Logic Devices", Solid State Phenomena, Vol. 195, pp. 107-109, 2013

Online since:

December 2012




[1] Tanaka, T., Morigami, M., and Atoda, N. Jpn. J. Appl. Phys., 32, Part 1, No. 12B (1993), 6059.

[2] Park, Y. K., Ahn, Y. S., Kim, S. B., Lee, K. H., Cho, C. H., Chung, T. Y., and Kim, K. Journal of the Korean Physical Society, 44, 1 (2004), 112.

[3] Maboudian, R. and Howe, R. T. J. Vac. Sci. Technol. B, 15, 1 (1997), 1. x.