The Risk of Pattern Collapse for Structures in Future Logic Devices

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Pattern collapse has long been known in photoresist patterning where the resist patterns merge or collapse during rinsing and drying steps [. The forces responsible for this collapse were identified as capillary forces during the drying process. Structures such as titanium nitride DRAM cylinders [ and silicon Flash shallow trench isolation (STI) lines have also been observed to be pattern collapse sensitive due to increase in aspect ratio of the features. Micro-electromechanical systems (MEMS) devices also show a similar phenomenon, but on a larger length scale, and is referred to as stiction [. For the technology nodes <14 nm, back-end-of-line (BEOL) low-k structures are also on the verge to show pattern collapse behavior. Whether a structure is sensitive to pattern collapse or not depends on several parameters, which will be analyzed in this paper.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

107-109

Citation:

M. Sankarapandian et al., "The Risk of Pattern Collapse for Structures in Future Logic Devices", Solid State Phenomena, Vol. 195, pp. 107-109, 2013

Online since:

December 2012

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$38.00

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