Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography


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Fluoride contamination on aluminum bond pads is a major issue in the reliability of semiconductor products [. Fluoride contamination can lead to bond pad corrosion, bond pad staining [, (see Figure 1) and bad wire bond quality [. In the ITRS a maximum allowable fluoride concentration in the aluminum wafer process environment is listed [. However, it is not only the air concentration that determines the criticality, but also the exposure time, humidity, and if there is a fluoride source available that can maintain an increased air concentration of fluoride. Therefore, it is more valuable to know at what surface concentrations fluoride contamination on aluminum surfaces become an issue.



Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




R. Te Brake et al., "Determination of Fluoride Concentration on Aluminum Bond Pads Using Liquid Phase Extraction Ion Chromatography", Solid State Phenomena, Vol. 195, pp. 139-142, 2013

Online since:

December 2012




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[2] H. Younan, L. Y. Kheng, Z. Siping, R. Ramesh, T. J. Boon: Investigation and Failure Analysis of Flower-like, Defects on Microchip Aluminum Bondpads in Wafer Fabrication (ICSE2006 Proc., Malaysia, 2006).


[3] Z. Siping, H. Younan, R. Ramesh, L. Kun: Failure Analysis of NSOP Problem Due to Al Fluoride Oxide on Microchip Al Bondpads (ICSE2006 Proc., Malaysia, 2006).


[4] ITRS 2011 edition, Chapter yield enhancement, table 2011_YE3.