The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

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Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm2 is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

146-149

Citation:

Y. Sun et al., "The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition", Solid State Phenomena, Vol. 195, pp. 146-149, 2013

Online since:

December 2012

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$38.00

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