X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials


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The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.



Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




P. Hönicke et al., "X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials", Solid State Phenomena, Vol. 195, pp. 274-276, 2013

Online since:

December 2012




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