X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials
The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.
Paul Mertens, Marc Meuris and Marc Heyns
P. Hönicke et al., "X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials", Solid State Phenomena, Vol. 195, pp. 274-276, 2013