Optimized Wet Processes and PECVD for High-Efficiency Solar Cells


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The semiconductor industry considers wet cleans to be critical surface preparation steps. The Si/SiO2 interface, for example, is very critical to achieve high gate oxide integrity and avoid leakage or stacking faults. Similarly, the solar industry has seen the value of wet processes to achieve best cell performance. In this study, we highlight the effect of pre-cleans, texturization and final cleans on cell parameters. We also studied the importance of coupling these wet cleaning and texturization steps with the PECVD steps to achieve the film quality required for highest solar cell efficiency.



Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




I. Kashkoush et al., "Optimized Wet Processes and PECVD for High-Efficiency Solar Cells", Solid State Phenomena, Vol. 195, pp. 297-300, 2013

Online since:

December 2012




[1] Gluntz. S., et al, N-type silicon enabling efficiencies > 20% in industrial production, Proc. 35th IEEE PVSC, Honolulu, Hawaii, USA, pp.50-56.

[2] Edler, A., et al, High lifetime on n-type silicon wafers obtained after Boron diffusion, Proc. 25th EUPVSEC, Valencia, Spain, p.1905-(1907).

[3] Schutz-Kuchly, T., et al, Light-induced Degradation effects in Boron-Phosphorous Compensated n-type CZ Silicon, Appl. Phys. Lett. Vol. 93, p.093505.

DOI: https://doi.org/10.1063/1.3334724

[4] Lim, B. et al, Permanent Deactivation of Boron-Oxygen recombination center in silicon solar cells, Proc. 23rd EUPVSEC, Valencia, Spain, pp.1018-1022.