Wet Etching Behavior of Poly-Si in TMAH Solution
Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.
Paul Mertens, Marc Meuris and Marc Heyns
H. Takahashi et al., "Wet Etching Behavior of Poly-Si in TMAH Solution", Solid State Phenomena, Vol. 195, pp. 42-45, 2013