Wet Etching Behavior of Poly-Si in TMAH Solution

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Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

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Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

42-45

Citation:

H. Takahashi et al., "Wet Etching Behavior of Poly-Si in TMAH Solution", Solid State Phenomena, Vol. 195, pp. 42-45, 2013

Online since:

December 2012

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$38.00

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