SiO2 Etch Rate Modification by Ion Implantation

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It is well known that etch rate of dielectric thin films, such as silicon dioxide, increases after ion implantation. A study of the structural damage created in SiO2 films by ion implantation can be found in references [,]. It is reported that nuclear collision of implanted ion with target ions produces a relevant rearrangement of in SiO2 target network: Si and O target atoms are moved from their original positions to new positions where original local atomic coordination is not recovered. As final result, damage consists mainly of Si-O broken bonds and non-bridging oxygen.

Info:

Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

55-57

Citation:

E. Bellandi and V. Soncini, "SiO2 Etch Rate Modification by Ion Implantation", Solid State Phenomena, Vol. 195, pp. 55-57, 2013

Online since:

December 2012

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$38.00

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[1] [2] [3] [4] [5] [6] [7] 80% 10% 20% 30% 40% 50% Displacements.

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