SiO2 Etch Rate Modification by Ion Implantation
It is well known that etch rate of dielectric thin films, such as silicon dioxide, increases after ion implantation. A study of the structural damage created in SiO2 films by ion implantation can be found in references [,]. It is reported that nuclear collision of implanted ion with target ions produces a relevant rearrangement of in SiO2 target network: Si and O target atoms are moved from their original positions to new positions where original local atomic coordination is not recovered. As final result, damage consists mainly of Si-O broken bonds and non-bridging oxygen.
Paul Mertens, Marc Meuris and Marc Heyns
E. Bellandi and V. Soncini, "SiO2 Etch Rate Modification by Ion Implantation", Solid State Phenomena, Vol. 195, pp. 55-57, 2013