Cleaning of III-V Materials: Surface Chemistry Considerations

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Compound semiconductors based on group III and V elements of the periodic system have high charge carrier mobility and are, therefore, candidates for channel material in future CMOS devices [1]. In order to design wet chemical solutions that lead to appropriate surface pre-conditioning and allow for nanoscale processing and minimal substrate loss, a thorough understanding of the interactions between the substrate and the chemical solutions is needed and the basic etching mechanisms needs to be resolved. The focus of this research is on InP in acidic solutions. ESH aspects are also considered.

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Periodical:

Solid State Phenomena (Volume 195)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

98-99

Citation:

D. H. van Dorp et al., "Cleaning of III-V Materials: Surface Chemistry Considerations", Solid State Phenomena, Vol. 195, pp. 98-99, 2013

Online since:

December 2012

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$41.00

[1] J.A. del Alamo: Nature 479 (2011), p.317.

[2] P. H.L. Notten: J. Electrochem. Soc. 131 (1984), p.2641.

[3] K.A. Reinhardt and R.F. Reidy: Handbook of Cleaning for Semiconductor Manufacturing - fundamentals and applications (John Wiley and Sons, U.S.A., 2011).