Ultra Clean Processing of Semiconductor Surfaces XI
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing, as well as cleaning for semiconductor photo-voltaic applications. Also covered are studies of general topics such as particle removal using acoustic enhancement, the removal of metallic contamination, pattern collapse of fine flexible and fragile features, wetting and drying, contamination control and contamination metrology. The FEOL and BEOL contributions also treat the surface chemistry of silicon and other semiconductors, cleaning related to new gate stacks, cleaning at the interconnect level, resist strip and polymer removal, cleaning and contamination control for various new materials and cleaning following CMP (chemical mechanical polishing).
Review from Ringgold Inc., ProtoView: Since 1992 the bi-annual conference has addressed issues relating to contamination, cleaning, and surface preparation in mainstream large-scale integrated circuit manufacturing. The 73 papers here cover cleaning for front-end-of-the-line applications, wet etching, surface chemistry and functionalization, cleaning for back-end-of-the-line and three-dimensional applications, particles and megasonic cleaning, wetting and drying, metal contamination, and cleaning and wet etching for silicon photo-voltaic applications. Among the topics are selective nitride etch by using fluorides in high boiling point solvent, one-step wet clean removal of post-etch fluropolymer residues, evaluating very dilute alkaline solutions for wafer cleaning with megasonic irradiation, effects of substrate temperature on the learning of micropatterns during the rinse-dry process, and wet cleaning for solar cell manufacturing applications.