Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method

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The ZnO thin film structures were obtained by MOCVD method under atmospheric pressure onto Si substrates heated up to 250-350 оС. The film thickness varied from 0.4 – 0.5 µm. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.

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Periodical:

Solid State Phenomena (Volume 200)

Edited by:

Sergii Ubizskii, Leonid Vasylechko and Yaroslav Zhydachevskii

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3-9

Citation:

N. M. Roshchina et al., "Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method", Solid State Phenomena, Vol. 200, pp. 3-9, 2013

Online since:

April 2013

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