Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method
The ZnO thin film structures were obtained by MOCVD method under atmospheric pressure onto Si substrates heated up to 250-350 оС. The film thickness varied from 0.4 – 0.5 µm. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.
Sergii Ubizskii, Leonid Vasylechko and Yaroslav Zhydachevskii
N. M. Roshchina et al., "Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method", Solid State Phenomena, Vol. 200, pp. 3-9, 2013