Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method


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The ZnO thin film structures were obtained by MOCVD method under atmospheric pressure onto Si substrates heated up to 250-350 оС. The film thickness varied from 0.4 – 0.5 µm. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.



Solid State Phenomena (Volume 200)

Edited by:

Sergii Ubizskii, Leonid Vasylechko and Yaroslav Zhydachevskii




N. M. Roshchina et al., "Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method", Solid State Phenomena, Vol. 200, pp. 3-9, 2013

Online since:

April 2013




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