Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon


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Structural defects induced by electron irradiation of n-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined and the optimal annealing conditions were found. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.



Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy






N.A. Sobolev et al., "Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon", Solid State Phenomena, Vols. 205-206, pp. 305-310, 2014

Online since:

October 2013




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