Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon

Abstract:

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Structural defects induced by electron irradiation of n-Cz-Si wafers were identified. The influence of the annealing conditions in a chlorine-containing atmosphere on the structural and luminescent properties of the samples was examined and the optimal annealing conditions were found. Light-emitting diodes based on electron-irradiated and high-temperature-annealed wafers were fabricated by a vapour-phase epitaxy technique and their luminescence properties were studied. A high-intensity dislocation-related D1 line was observed at 1.6 μm in the room-temperature electroluminescence spectrum.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy

Pages:

305-310

DOI:

10.4028/www.scientific.net/SSP.205-206.305

Citation:

N.A. Sobolev et al., "Fabrication of Light-Emitting Diodes with Dislocation-Related Luminescence by Annealing of Electron-Irradiated Silicon", Solid State Phenomena, Vols. 205-206, pp. 305-310, 2014

Online since:

October 2013

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Price:

$38.00

[1] N.A. Sobolev, Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence (review paper), Semiconductors, 44 (2010) 1-23.

DOI: 10.1134/s106378261001001x

[2] L. Xiang, D. Li, L. Jin, D. Yang, Dislocation-related electroluminescence of silicon after electron irradiation, Solid State Commun., 152 (2012) 1956-(1959).

DOI: 10.1016/j.ssc.2012.08.011

[3] L. Xiang, D. Li, L. Jin, S. Wang, D. Yang, Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon, J. Appl. Phys., 113 (2013) 033518.

[4] N.A. Sobolev, A.M. Emel'yanov, V.V. Zabrodski , N.V. Zabrodskaya, V.L. Sukhanov, E.I. Shek. Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus, Semiconductors, 41 (2007).

DOI: 10.1134/s1063782607050247

[5] N.A. Sobolev, O.B. Gusev, E.I. Shek, V.I. Vdovin, T.G. Yugova and A.M. Emel`yanov, Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature, Appl. Phys. Lett., 72 (1998) 3326-3328.

DOI: 10.1063/1.121593

[6] V. Kveder, V. Badylevich, E. Steinman, A. Izotov, M. Seibt, W. Schröter, Room-temperature silicon light-emitting diodes based on dislocation luminescence, Appl. Phys., Lett. 84 (2004) 2106-2108.

DOI: 10.1063/1.1689402

[7] E.O. Sveinbjornsson, J. Weber, Room temperature electroluminescence from dislocation-rich silicon, Appl. Phys. Lett., 69 (1996) 2686-2688.

DOI: 10.1063/1.117678

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