Vacancy-Related Defects in Ge Doped with Tin

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It has been found that isolated V20 and V20 localized near tin atoms are formed in Ge doped with tin. Simultaneously with V20 annealing, the appearance of absorption spectra consisting of sharp lines was observed. The defect to which the spectra found corresponds has hydrogen-like properties. The distances between the lines in spectrum are in good agreement with those predicted by effective-mass theory. The formation of the defect found does not depend on oxygen concentration. An appearance of Fano resonance in the region of continuum was detected in addition to intracenter transitions of the defect. The defect found was identified as SnV20Ga.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy

Pages:

412-416

Citation:

L. I. Khirunenko et al., "Vacancy-Related Defects in Ge Doped with Tin", Solid State Phenomena, Vols. 205-206, pp. 412-416, 2014

Online since:

October 2013

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$38.00

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