Production and Annealing of Defects in Proton-Irradiated n-Ge

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The damaging factor of 15 MeV proton irradiation of n-Ge is investigated. The protons during irradiation went through thin samples and in this way effects of passivation are out of the scope of the report. As a result of irradiation, considerable losses of shallow donor states of group-V impurity atoms are observed. The removal rate of shallow donor states due to interactions of impurity atoms with intrinsic defects is found to be about 215 cm-1. Most of the defects produced are electrically neutral in n-type material. The role of radiation-produced acceptors is of minor importance. The main stage of isochronal annealing is occurred over a temperature interval of T=250° to 400°C. After that point the electrical parameters are completely recovered. A model of generation processes of intrinsic defects under the proton irradiation is discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy

Pages:

422-426

Citation:

V. V. Emtsev et al., "Production and Annealing of Defects in Proton-Irradiated n-Ge", Solid State Phenomena, Vols. 205-206, pp. 422-426, 2014

Online since:

October 2013

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$38.00

[1] V.V. Emtsev, A.M. Ivanov, V.V. Kozlovski, A.A. Lebedev, G.A. Oganesyan, N.B. Strokan, G. Wagner, Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-type, Fiz. i Tekhn. Poluprovodn. (in Russian) [English Translation: Semiconductors (Springer)] 46 (2012).

DOI: https://doi.org/10.1134/s1063782612040069

[2] V.P. Markevich, S. Bernardini, I.D. Hawkins, A.R. Peaker, V.I. Kolkovsky, A. Nylandsted Larsen, L. Dobaczewski, Electrically active defects induced by hydrogen and helium implantation in Ge, Mat. Sci. in Semicond. Processing 11 (2008) 354-359.

DOI: https://doi.org/10.1016/j.mssp.2008.09.007

[3] J.S. Blakemore, Semiconductor Statistics, Pergamon Press, New York, (1962).

[4] V.V. Emtsev, R.L. Korchashkina, T.V. Mashovets, Vacancy-donor complexes in g-irradiated phosphorus-doped germanium, Phys. Stat. Sol. (a) 10 (1972) 43-48.

DOI: https://doi.org/10.1002/pssa.2210100103

[5] N.A. Vitovskii, D. Mustafakulov, A.P. Chekmareva, Sov. Phys. Semicond. Threshold energy for the displacement of atoms in semiconductors (in Russian) (English Translation by AIP) 11 (1977) 1024-1028.

[6] J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of ions in Solids, Pergamon, New York, (1985).

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