Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence


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The aim of this work is study of point defects modification in silicon dioxide by a high power density electron beam. In this work we used the method which allows to estimate quantitative content of luminescent point defects by dependence of cathodoluminescence on current density. Content of point defects was evaluated and changing of point defect content in silicon dioxide under electron beam was assessed. It is shown that content of defect connected with silicon deficit decreases whereas content of defect connected with oxygen deficit increases. The model of point defects transformation was suggested on the basis of these results.



Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy






E. V. Ivanova and M.V. Zamoryanskaya, "Investigation of Point Defects Modification in Silicon Dioxide by Cathodoluminescence", Solid State Phenomena, Vols. 205-206, pp. 457-461, 2014

Online since:

October 2013




[1] E.V. Kolesnikova (Ivanova), M.V. Zamoryanskaya, Silicon nanoclusters formation in silicon dioxide by high power density electron beam, Physica B 404 23-24 (2009) 4653-4656.

DOI: 10.1016/j.physb.2009.08.133

[2] E.V. Kolesnikova (Ivanova), A.A. Sitnikova, V.I. Sokolov, M.V. Zamoryanskaya, Formation of silicon nanoclusters in silicon oxide using an electron beam, Solid State Phenomena 108-109 (2005) 729-734.

DOI: 10.4028/

[3] M.V. Zamoryanskaya, Cathodoluminescence of SiO2/Si system, Solid State. Phenomena 156-158 (2010) 487-492.

DOI: 10.4028/

[4] L.N. Skuja, A.R. Silin, Non-Bridging Oxygen Center in Fused Silika, Physica Status Solidi (a) 70 (1982) 43-49.

DOI: 10.1002/pssa.2210700107

[5] Gee, C.M., Kastner, M.: Photoluminescence from E band centers in amorphous and crystalline SiO2. J. Non-Cryst. Solids 40 (1980) 577–586.

DOI: 10.1016/0022-3093(80)90131-3

[6] H. -J. Fitting, T. Barfels, A.N. Trukhin, B. Schmidt, A. Gulans, A. Von Czarnovski, Cathodoluminescence of Ge+, Si+, and O+ implanted SiO2 layers and the role of mobile oxygen in defect transformations, Journal of Non-Crystalline Solids 303 (2002).

DOI: 10.1016/s0022-3093(02)00952-3

[7] K. Kajihara, M. Hirano, M. Uramoto, Y. Morimoto, L. Skuja, H. Hosono. Interstitial oxygen molecules in amorphous SiO2. I. Quantitative concentration analysis by thermal desorption, infrared photoluminescence, and vacuum-ultraviolet optical absorption, J. Appl. Phys., 98 (2005).

DOI: 10.1063/1.1943504

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