Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures

Abstract:

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In this work, we study the photoluminescence and the Raman scattering behavior of Si rich silicon oxynitride films obtained by plasma enhanced chemical vapor deposition as a result of thermal anneals during 1 hour in the temperature range from 400O to 1100OC and discuss the ways of the transformation of structure in them.

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Periodical:

Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy

Pages:

492-496

Citation:

V. Naseka et al., "Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures", Solid State Phenomena, Vols. 205-206, pp. 492-496, 2014

Online since:

October 2013

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$38.00

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