Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures
In this work, we study the photoluminescence and the Raman scattering behavior of Si rich silicon oxynitride films obtained by plasma enhanced chemical vapor deposition as a result of thermal anneals during 1 hour in the temperature range from 400O to 1100OC and discuss the ways of the transformation of structure in them.
V. Naseka et al., "Photoluminescence and Raman Scattering Behavior of Si Rich Silicon Oxynitride Films Annealed at Different Temperatures", Solid State Phenomena, Vols. 205-206, pp. 492-496, 2014