10 cm Diameter Mono Cast Si Growth and its Characterization


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To get the optimized condition and ideal furnace structure, we have performed seed cast growth of mono-crystalline Si by using unidirectional solidification furnace. More than 20 ingots of 10 cm diameter and 10 cm height were grown under different growth conditions. The quality of ingots was characterized by using Fourier transform infrared spectroscopy (FTIR), infrared microscopy, scanning infrared polariscope (SIRP), X-ray topography, etc. We have realized reduction of carbon, residual strain and extended defects, which may contribute the increase of solar cell efficiency.



Solid State Phenomena (Volumes 205-206)

Edited by:

J.D. Murphy




Y. Miyamura et al., "10 cm Diameter Mono Cast Si Growth and its Characterization", Solid State Phenomena, Vols. 205-206, pp. 89-93, 2014

Online since:

October 2013




[1] B. Wu, N. Stoddard, R. Ma, R. Clark, J. Cryst. Growth, 310 (2008) 2178.

[2] N. Stoddard, B. Wu, I. Witting, M. Wagner, Y. Park, G. Rozgonyi, R. Clark, Solid State Phenom, 131-133 (2008) 1.

[3] K. Arafune, E. Ohishi, H. Sai, Y. Ohshita, M. Yamaguchi, J. Cryst. Growth, 308 (2008) 5.

[4] B. Gao, X.J. Chen, S. Nakano, K. Kakimoto, J. Cryst. Growth, 312 (2010) 1572.

[5] B. Gao, S. Nakano, K. Kakimoto, J. Electrochem. Soc., 157 (2010) H153.

[6] B. Gao, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto J. Cryst. Growth, 352 (2012) 4752.

[7] M. Fukuzawa, M. Yamada, J. Cryst. Growth, 229 (2001) 22.

[8] K. Jiptner, M. Fukuzawa, Y. Miyamura, H. Harada, K. Kakimoto, T. Sekiguchi, Jpn. J. Appl. Phys., 52 (2013) 065501.

DOI: https://doi.org/10.7567/jjap.52.065501