Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning

Abstract:

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Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion [1].

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Periodical:

Solid State Phenomena (Volume 219)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

205-208

Citation:

B. J. Cho et al., "Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning", Solid State Phenomena, Vol. 219, pp. 205-208, 2015

Online since:

September 2014

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$38.00

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[1] Krishnan, M., J.W. Nalaskowski, and L.M. Cook, Chem. Rev. 110(1) (2010), pp.178-204.

[2] Venkatesh, R.P., B.J. Cho, S. Ramanathan, and J.G. Park, J. Electrochem. Soc. 159(11), (2012), p. C447-C452.

[3] Tromans, D., J. Electrochem. Soc. 145(3), (1998), p. L42-L45.

[4] Chavez, K.L., and D.W. Hess, J. Electrochem. Soc. 148(11), (2001), p. G640-G643s.

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